Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

Article

Abstract

The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/n-type GaN (graphene/p-type GaN) samples, the Schottky barrier height is 0.85 (2.50) eV. To determine the Fermi-level pinning/unpinning at the graphene/GaN interfaces, an analysis is conducted according to the Schottky–Mott limit. It is shown that the Fermi energy level is unpinned and the barrier-height value is dependent on the work function of graphene. Investigation of graphene/GaN interfaces is important, and providing the other technique for surface potential control is possible.

Notes

Acknowledgments

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 103-2112-M-018-003-MY3) in the form of grants.

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Electronics and Optoelectronics Research LaboratoriesIndustrial Technology Research InstituteHsinchuTaiwan
  2. 2.Institute of PhotonicsNational Changhua University of EducationChanghuaTaiwan

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