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Role of immersion time on the properties of SILAR deposited CuO thin films

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Abstract

CuO thin films were synthesized at relatively low temperature by employing an inexpensive SILAR method. Effect of immersion time on the properties of grown film was studied using structural, morphological and optical characterizations. Structural, morphological, optical and electrical studies of the prepared CuO films were done using X-ray diffraction, field emission scanning electron microscope, and UV–Vis–NIR spectrometer and Hall probe, respectively. The films were found show different nanostructures depending on immersion time. The calculated crystalline size of the films is found increase with the increase of immersion time, and it is found to be 19 nm for 30 s immersion time. Vibration peaks of Cu–O and O–Cu–O bonds have been identified using Fourier transformation infrared spectroscopy. Optical band gap energy of the grown CuO films is calculated and it is found vary from 1.8 to 1.6 eV depending on the immersion time and annealing temperature. Hall effect measurements have shown a p-type conductivity of the grown films.

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Authors and Affiliations

  1. PG and Research Department of Physics, National College, Tiruchirappalli, Tamil Nadu, India

    A. T. Ravichandran

  2. Department of Physics, JJ College of Arts and Science, Pudukkottai, 622 422, Tamil Nadu, India

    K. Dhanabalan

  3. PG and Research Department of Physics, Arul Anandar College, Karumathur, 625514, Tamil Nadu, India

    S. Valanarasu

  4. PG and Research Department of Physics, H.H. The Rajah’s College, Pudukkottai, Tamil Nadu, India

    A. Vasuhi

  5. Millimeter-Wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100-715, Republic of Korea

    A. Kathalingam

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  1. A. T. Ravichandran
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  2. K. Dhanabalan
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  3. S. Valanarasu
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  5. A. Kathalingam
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Correspondence to A. Kathalingam.

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Ravichandran, A.T., Dhanabalan, K., Valanarasu, S. et al. Role of immersion time on the properties of SILAR deposited CuO thin films. J Mater Sci: Mater Electron 26, 921–926 (2015). https://doi.org/10.1007/s10854-014-2483-0

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  • DOI: https://doi.org/10.1007/s10854-014-2483-0

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