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Direct real-time observation on nanoscale mechanical behavior of freestanding GaN short nano-bridge

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This paper describes a novel technique to design, fabricate, test, and real-time monitor the freestanding GaN nano-bridge over homogeneous substrate. Stress–strain response and Young’s modulus of GaN nano-bridge for 1.2 μm in span with aspect ratio of ~5 can be extracted by observing mechanical load–deflection response video images and load–displacement curve using instrumented nanoindentation in transmission electron microscopy. A two-dimensional finite element model showed that a positive agreement between principal stresses varies in a beam by experimental observation and stress contour versus indentation depth by numerical simulation. This method could also be applied on the wide range of nano-materials to identify the mechanical response.

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This work was supported by the National Science Council of Taiwan under Contract No. NSC 100-2221-E-158-002, MOST 103-2221-E-158-005 and the Shih Chien University Kaohsiung Campus USC-103-05-05013. Our thanks also goes to the Center for Micro/Nano Science and Technology, National Sun Yat-sen University, and Dr. C. S. Hung for technical support.

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Correspondence to Shang-Chao Hung.

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Video 1

A sequence of recording images showing stress contour and stress gradient corresponding to the indentation deformation stages experiment performed in TEM. There is nearly no residual deformation after full separation (GIF 6949 kb)

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Hung, SC. Direct real-time observation on nanoscale mechanical behavior of freestanding GaN short nano-bridge. J Mater Sci: Mater Electron 26, 307–311 (2015).

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