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Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

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Abstract

The vacancy-oxygen (VO or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of carbon on the formation of VO defect and its conversion upon annealing to the VO2 defect. Cz-Si samples with various carbon concentrations were irradiated by 2 MeV electrons. The formation of VO pair, its thermal stability and evolution and its conversion to the VO2 defect were previously monitored and studied by means of infrared (IR) spectroscopy. Modeling of the formation process showed that the VO concentration has a square root dependency on the carbon substitutional (Cs) concentration. The conversion of the VO to the VO2 defect decreases with the increase of the Cs concentration. The results are in agreement with the experimental observed dependency of the conversion ratio on the Cs concentration, since [VO] increases when [Cs] increases.

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Acknowledgments

The authors thank Prof. Vladimir Voronkov for valuable discussions.

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Authors and Affiliations

  1. Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, 157 84, Athens, Greece

    C. A. Londos & E. N. Sgourou

  2. Faculty of Engineering and Computing, Coventry University, Coventry, CV1 2JH, UK

    A. Chroneos

  3. Department of Materials, Imperial College, London, SW7 2AZ, UK

    A. Chroneos

Authors
  1. C. A. Londos
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  2. E. N. Sgourou
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  3. A. Chroneos
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Correspondence to A. Chroneos.

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Londos, C.A., Sgourou, E.N. & Chroneos, A. Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon. J Mater Sci: Mater Electron 25, 4872–4876 (2014). https://doi.org/10.1007/s10854-014-2246-y

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  • DOI: https://doi.org/10.1007/s10854-014-2246-y

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