Skip to main content
SpringerLink
Log in

Microstructural defect properties of InGaN/GaN blue light emitting diode structures

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution X-ray diffraction, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and current–voltage characteristic (I–V). We have found out that the tilt and twist angles, lateral and vertical coherence lengths of mosaic blocks, grain size, screw and edge dislocation densities of GaN and InGaN layers, and surface roughness monotonically vary with In content. Mosaic defects obtained due to temperature using reciprocal lattice space map has revealed optimized growth temperature for active InGaN layer of MQW LED. It has been observed in this growth temperature that according to AFM result, LED structure has high crystal dimension, and is rough whereas according to PL and FTIR results, bandgap energy shifted to blue, and energy peak half-width decreased at high values. According to I–V measurements, it was observed that LED reacted against light at optimized temperature. In conclusion, we have seen that InGaN MQW structure’s structural, optical and electrical results supported one another.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. S. Nakamura, Science 281, 956 (1998)

    Article  Google Scholar 

  2. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996)

    Article  Google Scholar 

  3. S.D. Lester, F.A. Ponce, M.G. Crawford, D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995)

    Article  Google Scholar 

  4. D. Kapolnek, X.H. Wu, B. Heyıng, S. Keller, B.P. Keller, U.K. Mıshra, S.P. Denbaars, J.S. Speck, Appl. Phys. Lett. 67, 1541 (1995)

    Article  Google Scholar 

  5. M. Schuster, P.O. Gervais, B. Jobst, W. Ho¨sler, R. Averbeck, H. Riechert, A. Iberlkand, R. Sto¨mmerk, J. Phys. D Appl. Phys. 32, 56 (1999)

    Article  Google Scholar 

  6. M.A. Moram, M.E. Vickers, Rep. Prog. Phys. 72, 036502 (2009)

    Article  Google Scholar 

  7. M.K. Öztürk, H. Yu, B. Sarıkavak, S. Korçak, S. Özçelik, E. Özbay, J. Mater. Sci. Mater. Electron. 21, 185 (2010)

    Google Scholar 

  8. T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Gobe, S. Christiansen, M. Albrecht, H.P. Strun, Philos. Mag. A 77, 1013 (1998)

    Article  Google Scholar 

  9. G.K. Williamson, W.H. Hall, Acta Metall. 1, 22 (1953)

    Article  Google Scholar 

  10. H. Yu, M.K. Öztürk, S. Özçelik, E. Özbay, J. Crys, Growth 293, 273 (2006)

    Article  Google Scholar 

  11. F.K. Yam, Z. Hassan, Superlattices Microstruct. 43, 1 (2008)

    Article  Google Scholar 

  12. E. Arslan, M.K. Öztürk, Ö. Duygulu, A.A. Kaya, S. Özçelik, E. Özbay, Appl. Phys. Mater. Sci. Process. 94, 73 (2009)

    Article  Google Scholar 

  13. E. Arslan, M.K. Öztürk, A. Teke, S. Özçelik, E. Özbay, J. Phys. D Appl. Phys. 41, 155317 (2008)

    Article  Google Scholar 

  14. M.E. Vickers, M.J. Kappers, R. Datta, C. McAleese, T.M. Smeeton, F.D.G. Rayment, C.J. Humphreys, J. Phys. D Appl. Phys. 38, A99 (2005)

    Article  Google Scholar 

  15. X.H. Zheng, H. Chen, Z.B. Yan, Y.J. Han, H.B. Yu, D.S. Li, Q. Huang, J.M. Zhou, J. Cryst. Growth 255, 63 (2003)

    Article  Google Scholar 

  16. P. Gay, P.B. Hirsch, A. Kelly, Acta Metall. 1, 315 (1953)

    Article  Google Scholar 

  17. C.G. Dunn, E.F. Koch, Acta Metall. 5, 548 (1957)

    Article  Google Scholar 

  18. P.F. Fewster, J. Appl. Crystallogr. 22, 64 (1989)

    Article  Google Scholar 

  19. M.J. Hordon, B.L. Averbach, Acta Met. 9, 237 (1961)

    Article  Google Scholar 

  20. Z.F. Ma, D.G. Zhao, Y.T. Wang, D.S. Jiang, S.M. Zhang, J.J. Zhu, Z.S. Liu, B.J. Sun, Hui Yang, J.W. Liang, J. Phys. D Appl. Phys. 41, 105106 (2008)

    Article  Google Scholar 

  21. S.K. Leey, T.H. Kımy, S.Y. Leey, K.C. Choi, P. Yang, Philos. Mag. 87, 2105 (2007)

    Article  Google Scholar 

  22. S. Nakamura, M. Senoh, T. Mukai, Appl. Phys. Lett. 62, 2390 (1993)

    Article  Google Scholar 

  23. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, M.A. Khan, Appl. Phys. Lett. 84, 183 (2004)

    Article  Google Scholar 

  24. D. Coquillat, M.L. Vassor d’Yerville, M. Kazan, C. Liu, I.M. Watson, P.R. Edwards, R.W. Martin, H.M.H. Chong, R.M. De La Rue., J. Appl. Phys. 103, 44910 (2008)

    Article  Google Scholar 

  25. B. Kınacı, S.Ş. Çetin, A. Bengi, S. Özçelik, Mater. Sci. Semicond. Process. 15, 531 (2012)

    Article  Google Scholar 

Download references

Acknowledgments

This work is supported by the projects DPT-2011K120290, ESF-EPIGRAT, EU-N4E, and NATO-SET-181, and TUBITAK under Project Nos. 107A004, 107A012, and 109E301.

Author information

Authors and Affiliations

  1. National Boron Research Institute, 06520, Ankara, Turkey

    Y. Baş

  2. Department of Physics, Gazi Photonic Research Center, Teknikokullar, 06500, Ankara, Turkey

    N. Akın, C. Başköse, Y. Özen, M. K. Öztürk & S. Özçelik

  3. Department of Physics, Faculty of Science, Istanbul University, Vezneciler, 34134, Istanbul, Turkey

    B. Kınacı

  4. Department of Physics, Department of Electrical and Electronics Engineering, Nanotechnology Research Center, Bilkent, 06800, Ankara, Turkey

    P. Demirel & E. Özbay

Authors
  1. Y. Baş
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. Demirel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. Akın
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. C. Başköse
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Y. Özen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. B. Kınacı
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. M. K. Öztürk
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. S. Özçelik
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. E. Özbay
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Y. Baş.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Baş, Y., Demirel, P., Akın, N. et al. Microstructural defect properties of InGaN/GaN blue light emitting diode structures. J Mater Sci: Mater Electron 25, 3924–3932 (2014). https://doi.org/10.1007/s10854-014-2108-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-014-2108-7

Keywords

Search

Navigation