Abstract
Indium sulfide (In2S3) is a good window or buffer layer for photovoltaic application. In this work, β-In2−xAlxS3 thin films with different thicknesses (400, 442, 646 and 714 nm) are successfully synthesized on heated glass substrates using a chemical spray pyrolysis technique. The thin film thickness effect on the structural, optical and photoluminescence (PL) properties of β-In2−xAlxS3 material is studied. The X-ray diffraction patterns suggest the formation of β-In2S3 cubic phase preferentially oriented towards (400) direction. The level of the residual dislocation seems to be reduced to 3.12 × 109 lines mm−2 for the optimum thickness (646 nm) for which the β-In2−xAlxS3 film crystallinity is the best one. In order to enhance the electrical properties, β-In2−xAlxS3 layers are annealed in air at 400 °C for different annealing times (15, 30 and 45 min). The minimum resistivity, maximum Hall mobility and carrier concentration are found for β-In2−xAlxS3 films annealed for 30 min. All samples have high transmittance of about 75 % but the wide band gap (Eg = 3.32 eV) is obtained for this optimum thickness. This result indicates good optical quality of β-In2−xAlxS3 layers. Defects-related PL properties are also discussed.
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Acknowledgments
The authors wish to thank the Comité Mixte de Cooperation Universitaire (Tunisia-France) for financial support under the project number 07S1304, as well as Egide France under the project Hubert Curien - Utique number 15385QG. They would like also to thank Pr. Michel Castagné and Dr. Cathy Guash from Institut d’Electronique du Sud, Université de Montpellier II for their help.
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Ajili, M., Kamoun, N.T. Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique. J Mater Sci: Mater Electron 25, 3840–3845 (2014). https://doi.org/10.1007/s10854-014-2097-6
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DOI: https://doi.org/10.1007/s10854-014-2097-6