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High crystallinity oligo(3-methylthiophenes) for p-channel organic field-effect transistors

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Abstract

A new type of oligo(3-methylthiophenes) with highly regiosymmetric chemical structure was presented for developing high performance and solution-processable organic field-effect transistors (OFETs). The representative molecule Br4MT, tetramer of the oligo(3-methylthiophenes), was synthesized through the oxidative cross-coupling reactions using Cu(II)-catalyst and fully characterized. The Br4MT exhibited remarkably high crystallinity and great ionization potential due to its unique molecular structure, evidenced by differential scanning calorimetry, electrochemical and X-ray diffraction studies. The solution-processed OFETs based on Br4MT achieved high hole mobility of up to 0.24 cm2/V/s with reasonable ambient stability, suggesting that the Br4MT had great potential for application in low-cost OFETs.

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Acknowledgments

We thank the financial support from National Natural Science Foundation of China (NSFC Grant No. 21174009).

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Authors and Affiliations

  1. Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China

    Bing Zhou, Pengcheng Huang & Chuanlin Liu

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  1. Bing Zhou
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  2. Pengcheng Huang
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  3. Chuanlin Liu
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Correspondence to Bing Zhou.

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Zhou, B., Huang, P. & Liu, C. High crystallinity oligo(3-methylthiophenes) for p-channel organic field-effect transistors. J Mater Sci: Mater Electron 25, 3727–3732 (2014). https://doi.org/10.1007/s10854-014-2082-0

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  • DOI: https://doi.org/10.1007/s10854-014-2082-0

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