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Preparation and photovoltaic properties of the composite based on porous In2S3 films and PCPDTBT

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Abstract

Large-scale porous indium sulfide (In2S3) films were synthesized via a facile one-step non-template hydrothermal process. A low band gap polymer, namely Poly[4,4 -bis(2-ethylhexyl)cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diyl-alt-2,1,3-benzothiadia zole-4,7-diyl](PCPDTBT) was synthesized by the Stille coupling reaction. A preliminary photovoltaic performance measurement of the fabricated device based on the as-prepared In2S3 porous film and PCPDTBT(ITO/In2S3 porous film/PCPDTBT/Au) shows a power conversion efficiency of 0.12 % under an illumination of 100 mW/cm−2.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Nos. 51002136), the Zhejiang Science&Technology Innovation Team Project (Nos. 2010R50012-15), the Natural Science Foundation of Ningbo (Nos. 2101A610162).

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Authors and Affiliations

  1. Laboratory of Polymer Materials and Engineering, Ningbo Institute of Technology, Zhejiang University, Ningbo, 315100, People’s Republic of China

    Fei Chen & Yinlin Lei

  2. Department of Polymer Science and Engineering, Jiaxing University, Jiaxing, 314001, People’s Republic of China

    Dan Deng

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  1. Fei Chen
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  2. Dan Deng
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  3. Yinlin Lei
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Correspondence to Yinlin Lei.

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Chen, F., Deng, D. & Lei, Y. Preparation and photovoltaic properties of the composite based on porous In2S3 films and PCPDTBT. J Mater Sci: Mater Electron 25, 2244–2247 (2014). https://doi.org/10.1007/s10854-014-1865-7

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  • DOI: https://doi.org/10.1007/s10854-014-1865-7

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