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The effect of hydrogen annealing on the molybdenum doped ZnO thin film

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Abstract

The electrical characteristics of hydrogen annealing on the molybdenum doped ZnO (MZO) thin film were discussed in the paper. The MZO film was deposited by an radio frequency sputtering, then it was annealed in hydrogen with a microwave plasma chemical vapor deposition system. The resistivity of MZO was decreased from 1.1 × 10−2 to 9.5 × 10−3 Ω cm after the hydrogen annealing. Improvements of the electrical properties are both due to the defects repairing through annealing and hydrogen doping effects of the MZO thin film. The higher temperature annealed MZO film shows slightly lower transmittance which is due to the higher carrier concentration.

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Acknowledgments

This work was supported by the NSC project through the contract number of 101-2221-E-168-018.

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Authors and Affiliations

  1. Department of Electrical Engineering, Kun Shan University, No. 195, Kunda Road, Yung-Kang District, Tainan, 71003, Taiwan, ROC

    Tien-Chai Lin & Wen-Feng Huang

  2. Department of Electro-Optical Engineering, Kun Shan University, No. 195, Kunda Road, Yung-Kang District, Tainan, 71003, Taiwan, ROC

    Wen-Chang Huang

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  1. Tien-Chai Lin
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  2. Wen-Feng Huang
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Correspondence to Wen-Chang Huang.

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Lin, TC., Huang, WF. & Huang, WC. The effect of hydrogen annealing on the molybdenum doped ZnO thin film. J Mater Sci: Mater Electron 25, 2138–2142 (2014). https://doi.org/10.1007/s10854-014-1850-1

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  • DOI: https://doi.org/10.1007/s10854-014-1850-1

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