Abstract
The highly arrayed arsenic doped p-ZnO nanowires/n-ZnO thin film homojunction light-emitting diode was fabricated on semi-insulated Si substrate. The homojunction was consisted of high-quality n-ZnO thin film grown by metal–organic chemical vapor deposition technology following arsenic doped ZnO nanowires grown by chemical vapor deposition. The device shows good rectification characteristic with a turn-on voltage of ~4.8 V and reverse breakdown voltage of ~18 V. Moreover, two distinct electroluminescence bands centered at 2.35 and 3.18 eV are detected from this device under forward bias at room temperature.
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Acknowledgments
This work was supported by NSFC (Grant Nos. 61223005, 61076045, 10804040, 11004020). The fundamental research funds for the central universities (Nos. DUT12LK22, DUT13RC205).
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Liang, H., Feng, Q., Xia, X. et al. Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode. J Mater Sci: Mater Electron 25, 1955–1958 (2014). https://doi.org/10.1007/s10854-014-1828-z
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DOI: https://doi.org/10.1007/s10854-014-1828-z