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Characteristics of brush plated copper indium telluride films

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Abstract

Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm−2.The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98–1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity.

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Authors and Affiliations

  1. ECMS Division, CSIR-CECRI, Karaikudi, India

    K. R. Murali

  2. Department of Physics, Pavai Group of Institutions, Paachal, Namakkal, India

    P. Muthusamy

  3. Department of Physics, Pavai College of Technology, Paachal, Namakkal, India

    A. Panneerselvam

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  1. K. R. Murali
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  2. P. Muthusamy
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  3. A. Panneerselvam
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Correspondence to K. R. Murali.

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Murali, K.R., Muthusamy, P. & Panneerselvam, A. Characteristics of brush plated copper indium telluride films. J Mater Sci: Mater Electron 24, 3412–3417 (2013). https://doi.org/10.1007/s10854-013-1263-6

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  • DOI: https://doi.org/10.1007/s10854-013-1263-6

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