Abstract
GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H2 in metal organic chemical vapor deposition system. It was found that in situ H2 treatment brought a porous SiC surface. The influence of H2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H2 pre-treatment can distinctly influence the GaN basic characteristics.
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Acknowledgments
Project supported by national natural science foundation of china (NO. 60976010, NO. 61076045, NO. 11004020), national high technology research and development program (863 program) (NO. 2011AA03A102), the fundamental research funds for the central universities (NO. DUT12LK22, DUT11LK43, DUT11RC(3)45), the research fund for the doctoral program of higher education (No. 20110041120045), the open fund of the state key laboratory of functional materials for informatics.
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Song, S., Shen, R., Liang, H. et al. Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment. J Mater Sci: Mater Electron 24, 3299–3302 (2013). https://doi.org/10.1007/s10854-013-1246-7
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DOI: https://doi.org/10.1007/s10854-013-1246-7