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Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

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Abstract

Ga2O3 thin films were deposited on c-plane Al2O3 substrates by electron beam evaporation equipment. The effects of post anneal treatment on structure and optical properties of Ga2O3 were investigated. The X-ray diffraction (XRD) results of the as-grown and the annealed samples indicated the films consisted with the mix of \(\beta\)-phase polycrystalline and amorphous Ga2O3. The electron diffraction pattern confirmed the existence of the nanocrystal grains. AFM images revealed that the anneal treatment promoted the film crystallization. Both Ga2O3 fims exhibited high transparency from visible light to near infrared region. An obvious band gap broadening phenomenon was observed for the annealed sample comparing with the as-grown sample. The optical band gap of the annealed sample was as large as 5.68 eV, which was inconsistent with the bulk \(\beta\)-phase Ga2O3. Meanwhile, the center of ultraviolet emission peak blue shifted about 0.42 eV for the annealed samples. The mechanism of the band gap broadening effect and ultraviolet emission peak blue shift were discussed.

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Acknowledgments

This work was supported by national natural science foundation of China (NO.60976010, NO.61076045, NO.11004020), national high technology research and development program (863 program) (NO.2011AA03A102), the fundamental research funds for the central universities (NO.DUT12LK22, DUT11LK43, DUT11RC(3)45), the research fund for the doctoral program of higher education(No. 20110041120045), the open fund of the state key laboratory of functional materials for informatics.

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, 116024, People’s Republic of China

    Yi Cheng, Hongwei Liang, Rensheng Shen, Xiaochuan Xia, Bo Wang, Yuanda Liu, Shiwei Song, Yang Liu & Guotong Du

  2. Department of Physics, Dalian Maritime University, Dalian, 116026, People’s Republic of China

    Yi Cheng

  3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130023, People’s Republic of China

    Guotong Du

  4. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People’s Republic of China

    Zhenzhong Zhang

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  1. Yi Cheng
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  2. Hongwei Liang
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  3. Rensheng Shen
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  4. Xiaochuan Xia
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  7. Shiwei Song
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  8. Yang Liu
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  9. Zhenzhong Zhang
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Correspondence to Hongwei Liang or Guotong Du.

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Cheng, Y., Liang, H., Shen, R. et al. Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal. J Mater Sci: Mater Electron 24, 2750–2754 (2013). https://doi.org/10.1007/s10854-013-1165-7

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  • DOI: https://doi.org/10.1007/s10854-013-1165-7

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