Influence of temperature, voltage and hydrogen on the reversible transition of electrical conductivity in sol–gel grown nanocrystalline TiO₂ thin film

Abstract

Undoped nanocrystalline p-type TiO₂ thin film was deposited by sol–gel method on a thermally oxidized p-Si (2–5 Ω cm resistivity and $\left\langle {100} \right\rangle$ orientation) substrate. The thin film was characterized by two-dimensional X-ray Diffraction (2D-XRD) and Field Emission Scanning Electron Microscopy (FESEM) to confirm the formation of stable nano crystalline anatase titania and to determine the grain size (~10 nm). Optical absorption spectroscopy was carried out to ascertain the band gap of the material. Two lateral Pd contacts were used as the metal electrodes to TiO₂ thin film to study the electrical conductivity. A clear p- to n-type transition was observed at 240 °C and a bias voltage of 0.83 V and the effect was enhanced on exposure to H₂ gas. The thin film showed fully n-type conductivity at 275 °C and 0.1 V. However, the reversal of the type of conductivity from n- to p-type was observed below 240 °C during lowering the temperature. The creation of oxygen vacancy and the diffusion of lattice oxygen to the surface of TiO₂ thin film might be the most possible mechanism of such transitions. Presence of hydrogen enhanced the process.