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Effect of Zr doping on the microstructure and electric properties of BaHf0.1Ti0.9O3 ceramics

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Abstract

Pure and Zr-doped barium titanate hafnate (BaHf0.1Ti0.9O3, short for BHT) ceramics were prepared by conventional solid state reaction method. The microstructures, dielectric and ferroelectric properties of BaHf0.1Ti0.9-x Zr x O3 (x = 0, 0.02, 0.04, 0.10) ceramics have been investigated. From the X-ray diffraction patterns it is indicated that Zr4+ ions have entered the unit cell maintaining the tetragonal perovskite structure of solid solution and the lattice constant of Zr-doped BHT ceramics increases with the increase of Zr content. There is an obvious difference between the grain shape of pure BHT ceramics and that of Zr-doped BHT ceramics. The temperature dependences of dielectric constant indicated that all of the three phase transition temperatures increase after doped zirconium. It is found that well-behaved hysteresis loops can be observed in pure and Zr-doped BHT ceramics. The remanent polarization (2P r) and the coercive electric field (2E C) of BaHf0.1Ti0.9-x Zr x O3 ceramics gradually decrease as the Zr content increases from 2 to 10 mol %.

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Acknowledgments

This work has been supported by the Natural Science Foundation of Chongqing, China (Grant No. CSTC2011BA4027), National Natural Science Foundation of China (Grant No. 51102288) and Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) (KFJJ201104).

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Correspondence to Chunlin Fu.

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Fu, C., Chen, Q., Cai, W. et al. Effect of Zr doping on the microstructure and electric properties of BaHf0.1Ti0.9O3 ceramics. J Mater Sci: Mater Electron 24, 1303–1307 (2013). https://doi.org/10.1007/s10854-012-0924-1

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  • DOI: https://doi.org/10.1007/s10854-012-0924-1

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