Abstract
Crosslinkable poly (arylene ether nitrile)/hollow glass microsphere (PEN/HGM) composites with relative low dielectric permittivity and high thermal stability were prepared by a solution mixing and thermal compression method. For achieving this purpose, HGM were tight embedded in network, which were formed by crosslinking reaction of PEN end-capped with phthalonitrile. Compared to pure PEN, the dielectric constant of the resulting composite with 15 wt% of HGM reduced from 4.1 to 2.7 at 100 kHz, and the dielectric loss decreased from 2.0 × 10−2 to 0.8 × 10−2 at 100 kHz. Furthermore, the as-prepared composites showed significant enhancement in glass transition temperature (increased by 64 °C) and onset thermal degradation temperature (increased by 41 °C). Therefore, such composites were expected to find their applications area such as integrated circuit where needs low dielectric constant, low dielectric loss and high thermal stability.
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Acknowledgments
The authors gratefully acknowledge support from the Major Science and Technology Project in Sichuan Province (2010 FZ 0117), National Natural Science Foundation (No. 51173021) and “863” National Major Program of High Technology (2012AA03A212).
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Zou, Y., Zhan, Y., Zhao, R. et al. Low dielectric permittivity and high thermal stability composites based on crosslinkable poly (arylene ether nitrile) and hollow glass microsphere. J Mater Sci: Mater Electron 24, 1238–1242 (2013). https://doi.org/10.1007/s10854-012-0913-4
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DOI: https://doi.org/10.1007/s10854-012-0913-4