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Effects of RF magnetron sputtering power density on NTC characteristics of Mn–Co–Ni thin films

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Abstract

Thin film NTCR (negative temperature coefficient resistance), based on Mn–Co–Ni oxide, was prepared by reactive RF magnetron sputtering with various sputtering power density (0.95–3.82 W/cm2). The crystalline structure and surface morphology of the NTC thin film were analyzed by XRD and AFM. The NTC characteristics, as a function of sputtering power density, were investigated. The values of B, α 25 and R 25 were in the range of 3,740–3,847 K, −4.328 to −4.207 %/K and 8.7–2,082.5 KΩ, respectively. With the increasing power density, the standard resistance (R 25 ) decreased and the consistency of R25 increased. Thin film NTCR with stable B value (3,740 K), low R 25 (104 Ω) and excellent consistency could be fabricated in mass production with about 3.82 W/cm2 sputtering power density.

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Acknowledgments

This work is sponsored by the UNISPAR (University-Industry-Science Partnership) of Guangdong province and Education Ministry of China (Grant No. 2009A090100003.).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, People’s Republic of China

    Guanhuan Lei, Hongwei Chen, Shanxue Zheng, Feizhi Lou, Linling Chen, Li Zeng, Jihua Zhang, Qiang Zhao & Chuanren Yang

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  1. Guanhuan Lei
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  2. Hongwei Chen
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Correspondence to Hongwei Chen.

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Lei, G., Chen, H., Zheng, S. et al. Effects of RF magnetron sputtering power density on NTC characteristics of Mn–Co–Ni thin films. J Mater Sci: Mater Electron 24, 1203–1207 (2013). https://doi.org/10.1007/s10854-012-0906-3

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  • DOI: https://doi.org/10.1007/s10854-012-0906-3

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