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Characterization deep boron diffused p++ silicon layer

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Abstract

In recent years the boron impurity-based dissolved wafer process has been repeatedly demonstrated as a powerful tool for forming single crystal Si microstructures. However, there is very little report on detailed characterization of the deep boron diffused silicon layer. This paper presents the optimization of deep boron diffused p++ silicon layer (>10 μm thick) of boron concentration above 5 × 1019 atoms/cm3. Detailed characterization of the p++ silicon layers, by using high resolution x-ray diffraction, secondary ion mass spectrometry, secondary electron micrograph are done. The optical behaviour of the p++ layers in mid-IR range is also carried out. The stress generated due to the deep diffusion is estimated to be 822 MPa by Raman spectroscopy.

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Acknowledgments

Authors would like to thank Director, Solid State Physics Laboratory, for his kind permission to publish this work. Help from other colleagues are also acknowledged.

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Authors and Affiliations

  1. Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi, 110054, India

    Shankar Dutta, Akhilesh Pandey, G. Saxena, R. Raman, A. Dhaul & Ramjay Pal

  2. Department of Physics, IIT Delhi, Hauz Khas, New Delhi, 110016, India

    Ratnamala Chatterjee

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  1. Shankar Dutta
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  2. Akhilesh Pandey
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  3. G. Saxena
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  4. R. Raman
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  5. A. Dhaul
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  6. Ramjay Pal
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  7. Ratnamala Chatterjee
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Correspondence to Shankar Dutta.

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Dutta, S., Pandey, A., Saxena, G. et al. Characterization deep boron diffused p++ silicon layer. J Mater Sci: Mater Electron 23, 1569–1574 (2012). https://doi.org/10.1007/s10854-012-0630-z

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  • DOI: https://doi.org/10.1007/s10854-012-0630-z

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