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Optimization of Bosch etch process for vertically stacked Si nanowires

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Abstract

A top-down process implementation method to fabricate multiple vertically stacked single-crystal silicon nanowires (SiNWs) has been presented in the paper. The etching and passivation deposition processes, critical to the final structural profile, are investigated in detail by varying processing time and applied power, so as to obtain the optimized processing parameters for the formation of stable and reproducible SiNW stacked structure.

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Acknowledgment

This work is supported by the China National Science Foundation (NSF) grant (61176101) and “Zi Jing Program foundation” of Zhejiang University and Zhejiang province funding for oversea returnees.

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Authors and Affiliations

  1. College of Electrical Engineering, Zhejiang University, Hangzhou, China

    Qing Guo, Tao Wang & Kuang Sheng

  2. College of Nanoscale Science and Engineering, State University of New York, Albany, NY, 12203, USA

    Bin Yu

Authors
  1. Qing Guo
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  2. Tao Wang
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  3. Kuang Sheng
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  4. Bin Yu
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Correspondence to Tao Wang.

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Guo, Q., Wang, T., Sheng, K. et al. Optimization of Bosch etch process for vertically stacked Si nanowires. J Mater Sci: Mater Electron 23, 334–342 (2012). https://doi.org/10.1007/s10854-011-0534-3

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  • DOI: https://doi.org/10.1007/s10854-011-0534-3

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