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Power and gas pressure effects on properties of amorphous In–Ga–ZnO films by magnetron sputtering

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Abstract

Amorphous In–Ga–ZnO thin films were deposited on quartz glass substrate at room temperature utilizing radio frequency magnetron sputtering technique. Sputtering power and oxygen flow rate effects on the physical properties of the In–Ga–ZnO films were systematically investigated. It is shown the film deposition rate and the conductivity of the In–Ga–ZnO films increased with the sputtering power. The as-grown In–Ga–ZnO films deposited at 500 W exhibited the Hall mobility of 17.7 cm2/Vs. Average optical transmittance of the In–Ga–ZnO films is greater than 80% in the visible wavelength. The extracted optical band gap of the In–Ga–ZnO films increased from 3.06 to 3.46 eV with increasing the sputtering power. The electrical properties of the In–Ga–ZnO films are greatly dependent on the O2/Ar gas flow ratio and post-growth annealing process. Increasing oxygen flow rate converted the In–Ga–ZnO films from semiconducting to semi-insulating, but the resistivity of the films was significantly reduced after being annealed in vacuum. Both the as-grown and annealed In–Ga–ZnO films show n-type electrical conductivity.

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Abbreviations

IGZO:

In–Ga–ZnO

TFTs:

Thin film transistors

AM:

Active matrix

RF:

Radio frequency

PLD:

Pulsed laser deposition

XRD:

X-ray diffraction

XPS:

X-ray photoelectron spectroscopy

BM:

Burstein-Moss

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Acknowledgments

This work was supported by National Natural Science Foundation of China (Grant No. 10904121), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry (Grant No. 10SRF-ROCS11) and Doctoral Fund of Ministry of Education of China (Grant No. 20090201120024).

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Authors and Affiliations

  1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710049, Shannxi, China

    Yuanjie Li, Xiaofen Hu, Zilong Liu & Jiangbo Ren

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  1. Yuanjie Li
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  2. Xiaofen Hu
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Correspondence to Yuanjie Li.

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Li, Y., Hu, X., Liu, Z. et al. Power and gas pressure effects on properties of amorphous In–Ga–ZnO films by magnetron sputtering. J Mater Sci: Mater Electron 23, 408–412 (2012). https://doi.org/10.1007/s10854-011-0467-x

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  • DOI: https://doi.org/10.1007/s10854-011-0467-x

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