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Electrical and optical properties of transparent conducting tin doped ZnO thin films

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Abstract

Electrical, optical and structural properties of tin doped ZnO thin films were investigated for various tin (Sn) doping concentrations. Sol gel method was used to deposit the films on microscopic glass slides and silicon substrate. UV–Visible spectrometer analysis showed excellent optically transparent oscillating natures with transparency above 85% in the visible range. Band gap of 3.24 eV was deduced for Sn doping concentration of 4 at% using envelope method. Scanning electron microscopy (SEM) was employed to study the morphology of the films. Crystallinity of the film was investigated by X-Ray diffraction (XRD), which revealed polycrystalline nature with orientation towards c-axis. Resistivity of 3.11 Ω-cm with minimum stress value of 8.11 × 10−3 MPa was measured for Sn doping concentration of 4 at%.

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Acknowledgments

One of the authors (D. S. Patil) is grateful to University Grants Commission, New Delhi, India for providing financial assistance to carry out this research work through major research project 39-551/2010 (SR).

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Authors and Affiliations

  1. Department of Electronics, North Maharashtra University, Jalgaon, Maharashtra, India

    Vrushali Shelke, B. K. Sonawane, M. P. Bhole & D. S. Patil

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  1. Vrushali Shelke
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  2. B. K. Sonawane
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  3. M. P. Bhole
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  4. D. S. Patil
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Correspondence to D. S. Patil.

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Shelke, V., Sonawane, B.K., Bhole, M.P. et al. Electrical and optical properties of transparent conducting tin doped ZnO thin films. J Mater Sci: Mater Electron 23, 451–456 (2012). https://doi.org/10.1007/s10854-011-0462-2

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  • DOI: https://doi.org/10.1007/s10854-011-0462-2

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