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Spectral properties of aluminium doped zinc oxide thin films prepared by SILAR method

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Abstract

The spectral properties of undoped and Al doped ZnO nano thin films prepared using double dip method otherwise called SILAR method (Successive Immersion Layer Adsorption Reaction) are reported. The thin films were having polycrystalline hexagonal structure. The optical properties of these films are studied and reported. The optical constants like the band gap (E g ), refractive indices (n, k), dielectric constant (ε), optical conductivity (σ), were estimated using an approximation algorithm developed from established procedures using transmittance spectrum of the thin films. The average excitation energy (E 0), oscillator strength (E d ), effective mass (m*), plasma frequency (ω p ), static dielectric constant (ε∞) and carrier concentration (N) are also estimated and reported. The highly transparent thin films showed nanowires protruding from stacked nanorods on SEM inspection that signifies the suitability of these thin films for gas sensors.

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Authors and Affiliations

  1. Annamalai Chettiar Nano Research Centre, Department of Physics, Sree Sevugan Annamalai College, Devakottai, 630303, India

    R. Chandramohan, S. Ezhilvizhian & T. A. Vijayan

  2. Department of Physics, Alagappa University, Karaikudi, 630003, India

    V. Dhanasekaran & T. Mahalingam

  3. Physics Department, Dravidian University, Kuppam, AP, 517425, India

    R. Chandramohan & S. Ezhilvizhian

  4. Physics Department, B.S. Abdur Rahman University, Chennai, 600048, India

    J. Thirumalai

  5. Physics Department, Government Arts College, Melur, 625106, India

    A. John Peter

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  1. R. Chandramohan
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  2. V. Dhanasekaran
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  3. S. Ezhilvizhian
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  4. T. A. Vijayan
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  7. T. Mahalingam
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Correspondence to R. Chandramohan.

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Chandramohan, R., Dhanasekaran, V., Ezhilvizhian, S. et al. Spectral properties of aluminium doped zinc oxide thin films prepared by SILAR method. J Mater Sci: Mater Electron 23, 390–397 (2012). https://doi.org/10.1007/s10854-011-0439-1

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  • DOI: https://doi.org/10.1007/s10854-011-0439-1

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