Abstract
Ga2O3 thin films were deposited on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition. The influence of annealing in N2 atmosphere at the temperature in the range of 800–1,000 °C was investigated by X-ray diffraction and optical transmittance spectra. With an increase of annealing temperature from 800 to 950 °C, the transformation from the initial amorphous film to polycrystalline β-Ga2O3 thin film was observed, and the transmittance was also improved remarkably. The optical band gap energy of the sample annealed at 950 °C was evaluated as ~5 eV. Whereas, after an annealing at 1,000 °C, the crystal quality became worse and the transmittance degraded. The mechanism of annealing in N2 atmosphere was discussed in view of phase transition.
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Acknowledgments
This work was supported by National Natural Science Foundation of China (Grant Nos. 61076045, 11004020, 60976010, 10804040, 60877020 and 10804014), National High Technology Research and Development Program (863) of China under Grant No. 2009AA03Z401, Scientific Research Foundation for Doctoral program of Liaoning Province of China under Grant No. 20101016. Youth Teacher Cultivation Fund by Dalian University of Technology, the Fundamental Research Funds for the Central Universities (DUT10LK01, DUT11LK43) and Doctoral Scientific Research Starting Foundation of Liaoning province (No.20081081).
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Liu, Y., Xia, X., Liang, H. et al. Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere. J Mater Sci: Mater Electron 23, 542–545 (2012). https://doi.org/10.1007/s10854-011-0433-7
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DOI: https://doi.org/10.1007/s10854-011-0433-7