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Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets

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Abstract

This study reports the successful preparation of Cu(In,Ga)Se2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 1017 cm−3 and mobility of 1.45 cm2V−1s−1. The resulting film exhibited p-type conductivity.

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Authors and Affiliations

  1. Department of Mechatronics Engineering, National Changhua University of Education, Changhua, 50007, Taiwan

    Y. C. Lin, Z. Q. Lin, C. H. Shen & L. Q. Wang

  2. Williams Advanced Materials Technologies Taiwan Co., Ltd, Taoyuan, 33857, Taiwan

    C. T. Ha & Chris Peng

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  1. Y. C. Lin
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  2. Z. Q. Lin
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  3. C. H. Shen
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Correspondence to Y. C. Lin.

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Lin, Y.C., Lin, Z.Q., Shen, C.H. et al. Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets. J Mater Sci: Mater Electron 23, 493–500 (2012). https://doi.org/10.1007/s10854-011-0424-8

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  • DOI: https://doi.org/10.1007/s10854-011-0424-8

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