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Diamond electromagnetic band gap structure based on Bi(Nb0.992V0.008)O4 ceramic

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Abstract

Three-dimensional (3D) diamond structure electromagnetic band gap (EBG) structures containing high-K Bi(Nb0.992V0.008)O4 (BVN) ceramic, fabricated by rapid-prototyping (RP) and gel casting methods, were investigated. The simulations based on finite element method (FEM) were employed to model the band structures. High-K Bi(Nb0.992V0.008)O4 ceramic was made into gel to cast into the diamond structure molds fabricated by rapid-prototyping method. Then the green bodies were sintered at 900 °C to obtain well densified EBG samples. The transmission characteristics of the EBG structures were measured by transmission/reflection (T/R) methods using a vector network analyzer. Wide complete band gap was observed in the transmission characteristics from 10.08 to 12.59 GHz and it agreed well with the simulation results, which was from 10 to 12.19 GHz.

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Acknowledgments

This work is supported by NSFC projects of China (50835007, 60871044, 50902090), National 973 project of China (2009CB623302) and National Project of International Science and Technology Collaboration (2009DFA51820).

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Authors and Affiliations

  1. Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi’an Jiaotong University, 710049, Xi’an, People’s Republic of China

    Wei Dai, Hong Wang, Zhiyuan Shen & Di Zhou

  2. Rapid-prototyping Engineering Centre of the Ministry of Education, Xi’an Jiaotong University, 710049, Xi’an, People’s Republic of China

    Minjie Wang & Dichen Li

Authors
  1. Wei Dai
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  2. Hong Wang
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  3. Minjie Wang
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  4. Zhiyuan Shen
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  5. Dichen Li
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  6. Di Zhou
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Correspondence to Hong Wang.

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Dai, W., Wang, H., Wang, M. et al. Diamond electromagnetic band gap structure based on Bi(Nb0.992V0.008)O4 ceramic. J Mater Sci: Mater Electron 22, 422–425 (2011). https://doi.org/10.1007/s10854-010-0153-4

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  • DOI: https://doi.org/10.1007/s10854-010-0153-4

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