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Microwave dielectric properties and its compatibility with silver electrode of LiNb0.6Ti0.5O3 with B2O3 and CuO additions

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Abstract

The influences of B2O3 and CuO (BCu, B2O3: CuO = 1:1) additions on the sintering behavior and microwave dielectric properties of LiNb0.6Ti0.5O3 (LNT) ceramics were investigated. LNT ceramics were prepared with conventional solid-state method and sintered at temperatures about 1,100 °C. The sintering temperature of LNT ceramics with BCu addition could be effectively reduced to 900 °C due to the liquid phase effects resulting from the additives. The addition of BCu does not induce much degradation in the microwave dielectric properties. Typically, the excellent microwave dielectric properties of εr = 66, Q × f = 6,210 GHz, and τ f  = 25 ppm/oC were obtained for the 2 wt% BCu-doped sample sintered at 900 °C. Chemical compatibility of silver electrodes and low-fired samples has also been investigated.

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Acknowledgement

This work was supported by Research start-up funds Dr. of Guilin University of Technology (No.000788, and 000787), Natural Science Foundation of China (No.20571059, 50762002 and 50572078), Natural Science Foundation of Guangxi (No.0832003Z), and Program for NCET-06-0656, MOE, China.

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Authors and Affiliations

  1. State Key Laboratory Breeding Base of Nonferrous metals and specific Materials Processing, Key laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin, 541004, People’s Republic of China

    Xiuli Chen, Huanfu Zhou, Liang Fang, Dongjin Chu, Changda Li & Ruili Guo

  2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the Education, Xi’an Jiaotong University, Xi’an, 710049, China

    Hong Wang

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  1. Xiuli Chen
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  2. Huanfu Zhou
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  3. Liang Fang
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  5. Changda Li
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  6. Ruili Guo
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  7. Hong Wang
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Correspondence to Huanfu Zhou.

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Chen, X., Zhou, H., Fang, L. et al. Microwave dielectric properties and its compatibility with silver electrode of LiNb0.6Ti0.5O3 with B2O3 and CuO additions. J Mater Sci: Mater Electron 22, 371–375 (2011). https://doi.org/10.1007/s10854-010-0145-4

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  • DOI: https://doi.org/10.1007/s10854-010-0145-4

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