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Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

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Abstract

(Pb y Sr1−y )Zn x Ti1−x O3−x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology and ferroelectric property of the thin film were studied. All the thin films show the typical perovskite phase structure. Both the crystallinity and c/a ratio of the perovskite phase increases initially and then decreases gradually with doping Zn in the thin film. Ferroelectric properties of the Zn-doped PST thin films, including ferroelectric hysteresis-loop, remnant polarization and coercive force, decrease gradually with increasing Zn. And the effect of Zn on ferroelectric properties is more obvious in PST thin film with high content of Pb than that with low Pb although the high lead thin film exhibits high intrinsic ferroelectric properties.

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Acknowledgments

We would like to gratefully acknowledge the financial support from NSFC (Grants Nos. 50872120, 50372057) and the National Key Scientific and Technological Project (Grant No. 2009CB623302).

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China

    Zan Zheng, Hongjian Zhao, Wenjian Weng, Gaorong Han, Ning Ma & Piyi Du

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  1. Zan Zheng
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  2. Hongjian Zhao
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Correspondence to Piyi Du.

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Zheng, Z., Zhao, H., Weng, W. et al. Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method. J Mater Sci: Mater Electron 22, 351–358 (2011). https://doi.org/10.1007/s10854-010-0141-8

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  • DOI: https://doi.org/10.1007/s10854-010-0141-8

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