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Nanoimprint glass-like carbon molds fabricated with ECR oxygen ion beams using polysiloxane oxide mask

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Abstract

We have investigated the nanofabrication for glass-like carbon molds with electron cyclotron resonance oxygen ion beam etching technologies using polysiloxane [-R2SiO-]n as an electron beam mask and a room-temperature imprint resist material. The maximum etching selectivity of polysiloxane film against glass-like carbon was 27, which was obtained with ion energy of 400 eV. It was found that the optimum etching time to fabricate dots of 500 nm in height was 5 min, which was explored according to the computer simulation. The glass-like carbon molds with square pole and cylinder dots were fabricated with 500 nm in width and diameter, respectively. The optimum imprinting pressure and its depth obtained after the press for 5 min were 0.5 MPa and 0.5 μm, respectively. We carried out the room-temperature nanoimprint lithography process using glass-like carbon molds. The resulting width of imprinted polysiloxane patterns was obtained in good agreement with that of the mold.

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Acknowledgments

The research was supported in part by Research for Promoting Technological Seeds from Japan Science and Technology Agency.

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Authors and Affiliations

  1. Electric and Control System Engineering Course, Faculty of Advanced Engineering, Maizuru National College of Technology, 234 Aza Shiroya, Maizuru, Kyoto, 625-8511, Japan

    S. Kiyohara & S. Araki

  2. Department of Mechanical Systems Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi, 400-8511, Japan

    Y. Kurashima

  3. Application and Technical Section, ELIONIX INC, 3-7-6 Motoyokohama, Hachioji, Tokyo, 192-0063, Japan

    Y. Taguchi, Y. Sugiyama & Y. Omata

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  1. S. Kiyohara
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  2. S. Araki
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  3. Y. Kurashima
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  4. Y. Taguchi
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  5. Y. Sugiyama
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  6. Y. Omata
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Correspondence to S. Kiyohara.

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Kiyohara, S., Araki, S., Kurashima, Y. et al. Nanoimprint glass-like carbon molds fabricated with ECR oxygen ion beams using polysiloxane oxide mask. J Mater Sci: Mater Electron 22, 183–188 (2011). https://doi.org/10.1007/s10854-010-0111-1

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  • DOI: https://doi.org/10.1007/s10854-010-0111-1

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