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Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells

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Abstract

Influence of the barrier layer composition and thickness on the structural and optical properties of TlInGaAsN Triple quantum wells (TQWs) was studied. Three types of TlInGaAsN TQW structures with different barriers were grown by gas-source molecular-beam epitaxy. Strong photoluminescence emission was obtained at room temperature from the TlInGaAsN TQW samples having 10 nm-thick TlGaAsN barriers, compared with the TlInGaAsN TQWs of 26 nm-thick TlGaAs barriers and those of 30 nm-thick TlGaAsN barriers. Structural investigations revealed that the TQWs with 10 nm-thick TlGaAsN barriers have good structural qualities. On the other hand, the other two samples showed the composition modulations at the interface between the lower side of the 3rd QW layer and the barrier layer. It was found that the addition of nitrogen into barrier layers and the decrease of barrier layer thickness significantly improve the crystalline quality and in turn the luminescence properties of the TlInGaAsN TQWs.

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Authors and Affiliations

  1. The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

    Kang Min Kim, Daivasigamani Krishnamurthy, Yuji Sakai, Jong-Uk Seo, Shigehiko Hasegawa & Hajime Asahi

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  1. Kang Min Kim
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  2. Daivasigamani Krishnamurthy
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  3. Yuji Sakai
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  4. Jong-Uk Seo
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  5. Shigehiko Hasegawa
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  6. Hajime Asahi
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Correspondence to Hajime Asahi.

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Kim, K.M., Krishnamurthy, D., Sakai, Y. et al. Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells. J Mater Sci: Mater Electron 21, 1024–1029 (2010). https://doi.org/10.1007/s10854-010-0104-0

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