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Electrical and crystallographic properties of nanocrystalline CdSe0.5S0.5 composite thin films deposited by dip method

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Abstract

A dip method is employed for the deposition of CdSe0.5S0.5 composite thin film at room temperature. Cadmium sulphate, thiourea and sodium selenosulphate were used as the basic source material. Solid solution with cubic phase was observed from X-ray diffraction studies. The specific conductivity of the film was found to be in order of 10−7 (Ωcm)−1. The temperature dependence of an electrical conductivity, thermoelectrical power, carrier density and carrier mobility for CdSe0.5S0.5 thin films have been examined. The low temperature conductivity is governed by a variable range of conduction while grain boundary limited conduction mechanism is predominant at higher temperature.

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Authors and Affiliations

  1. Department of Chemistry, J.S.M. College, Alibag, MS, India

    P. A. Chate

  2. Department of Chemistry, KIT’s College of Engineering, Kolhapur, MS, India

    D. J. Sathe

  3. Department of Chemistry, Shivaji University, Kolhapur, MS, India

    P. P. Hankare

Authors
  1. P. A. Chate
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  2. D. J. Sathe
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  3. P. P. Hankare
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Correspondence to P. A. Chate.

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Chate, P.A., Sathe, D.J. & Hankare, P.P. Electrical and crystallographic properties of nanocrystalline CdSe0.5S0.5 composite thin films deposited by dip method. J Mater Sci: Mater Electron 22, 111–115 (2011). https://doi.org/10.1007/s10854-010-0096-9

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  • DOI: https://doi.org/10.1007/s10854-010-0096-9

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