Abstract
The electrical and structural properties of Pt/Au Schottky contacts to n-InP have been investigated in the annealing temperature range of 200–500 °C by current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) measurements. The barrier height of as-deposited Pt/Au Schottky contact is found to be 0.46 eV (I–V) and 0.68 eV (C–V). For the contacts annealed at 300 °C, the barrier height is increased to 0.51 eV (I–V) 0.89 eV (C–V). Further increase in annealing temperature up to 500 °C, the barrier height has been found to decrease to 0.49 eV (I–V) 0.82 eV (C–V) from those values obtained at 300 °C. It has been found that the electrical characteristics are significantly improved for Pt/Au Schottky contacts upon annealing at 300 °C. Based on the Auger electron spectroscopy and X-ray diffraction results, the formation of Pt–In and Au–In intermetallic compounds at the interface may be the reason for the increase of barrier height after annealing at 300 °C for Pt/Au Schottky contacts. From the atomic force microscopy (AFM) results, it is evident that the surface becomes smooth with RMS roughness of 16.91 nm for the Pt/Au Schottky contacts after annealing at 500 °C compared to the 300 °C annealed sample (RMS roughness of 17.33 nm).
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References
R. Asmis Knut, R. Taylor Travis, M. Neumark Daniel, Chem. Phys. Lett. 308, 347 (1999)
C.W. Wilmsen, Physics and Chemistry of III–V Compound Semiconductor Interfaces (New York, Plenum, 1985)
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (John Wiley & Sons, New York, 2007)
G. Eftekhari, J. Vac. Sci. Technol. B 11, 1317 (1993)
S. Morikita, H. Ikoma, J. Vac. Sci. Technol. A 21, 226 (2003)
E.H. Rhoderick, R.H. Williams, Metal Semiconductor Contacts, 2nd edn. (Clarendon Press, Oxford, 1998)
R.H. Williams, G.Y. Robinson, Physics and Chemistry of III-V Compoud Semiconductor Interfaces (Plenum Press, New York, 1985)
H. Cetin, E. Ayyildiz, A. Turut, J. Vac. Sci. Technol. B 23, 2436 (2005)
R.L. Van Meirhaeghe, W.H. Laflere, F. Cardon, J. Appl. Phys. 76, 403 (1994)
M.E. Aydin, N. Yildirim, A. Turut, J. Appl. Phys. 102, 043701 (2007)
A. Sellai, K. Bouziane, S.H. Al Harthi, M. Al Harthi, M. Al Busaidi, F.S. Gard, J. Phys. D Appl. Phys. 40, 1351 (2007)
A.R. Arehart, B. Moran, J.S. Speck, U.K. Mishra, S.P. DenBaars, S.A. Ringel, J. Appl. Phys. 100, 023709 (2006)
W.-C. Hung, T.-F. Lei, C.-L. Lee, J. Appl. Phys. 78, 291 (1995)
Jeng Ming-Jer, Wang Hung-Thung, Chang Liann-Be, Y. Chengi-Chang, Lee Cheng-Min, Lin Ray-Ming, Jpn. J. Appl. Phys. 38, L1382 (1999)
G. Eftekhari, Semicond. Sci. Technol. 10, 1163 (1995)
S. Miyazaki, T.C. Lin, C. Nishida, H.T. Kaibe, T. Okumura, J. Electron. Mater. 25, 577 (1996)
Chen Huey-Ing, Chou Yen-I, Semicond. Sci. Technol. 18, 104 (2003)
W.-C. Huang, D.-R. Cai, International Workshop on Junction Technology (2006), pp. 295–298
H. Cetin, E. Ayyildiz, Appl. Surf. Sci. 253, 5961 (2007)
H. Norde, J. Appl. Phys. 50, 5052 (1979)
W.E. Spicer, I. Lindau, P. Skeath, C.Y. Su, P. Chye, Phys. Rev. Lett. 44, 420 (1980)
R.H. Williams, V. Montgomery, R.R. Varma, J. Phys. C Solid State Phys. 11, L735 (1978)
V. Rajagopal Reddy, P. Koteswara Rao, C.K. Ramesh, Mater. Sci. Eng. B 137, 200 (2007)
V. Rajagopal Reddy, P. Koteswara Rao, Microelectron. Eng. 85, 470 (2008)
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This work was financially supported by the grant from the “Industrial Source Technology Development Programs (2009-F014-01)” of the Ministry of Knowledge Economy (MKE) of Korea.
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Bhaskar Reddy, M., Janardhanam, V., Ashok Kumar, A. et al. The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP. J Mater Sci: Mater Electron 21, 804–810 (2010). https://doi.org/10.1007/s10854-009-9996-y
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DOI: https://doi.org/10.1007/s10854-009-9996-y