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Negative differential resistance effects in spun films of substituted phthalocyanine derivatives

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Abstract

Spun films of novel substituted lead phthalocyanine derivatives between aluminum and indium tin oxide electrodes exhibit large, reproducible negative differential resistance (NDR) in their current–voltage characteristics and can be electrically switched between a high conductance on state and a low conductance off state. Space charge limited conduction mechanism was identified from temperature dependent measurements to be responsible for charge transport. The NDR effect may be due to the charge storage in the structure near the electrodes.

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Acknowledgments

This work is sponsored by the Air Force Office of Scientific Research, Air Force Material Command, USAF, under grant number FA8655-03-1-3070. The US Government is authorized to reproduce and distribute reprints for Government purpose notwithstanding any copyright notation thereon.

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Authors and Affiliations

  1. Solid State Physics Department, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, 700032, India

    Satyajit Sahu

  2. Air Force Research Laboratory, 3550 Aberdeen Avenue, SE Kirtland AFB, Albuquerque, NM, 87117, USA

    Ashwani K. Sharma

  3. School of Chemical Sciences & Pharmacy, University of East Anglia, Earlham Road, Norwich, NR4 7TJ, UK

    Michael J. Cook

  4. Department of Materials, Queen Mary, University of London, London, E1 4NS, UK

    Asim K. Ray

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  1. Satyajit Sahu
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  2. Ashwani K. Sharma
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Correspondence to Asim K. Ray.

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Sahu, S., Sharma, A.K., Cook, M.J. et al. Negative differential resistance effects in spun films of substituted phthalocyanine derivatives. J Mater Sci: Mater Electron 21, 567–570 (2010). https://doi.org/10.1007/s10854-009-9958-4

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  • DOI: https://doi.org/10.1007/s10854-009-9958-4

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