Abstract
This work examined the roles of “free” and “trapped” charges in single-crystal rubrene organic field-effect transistors. Using a 2-capacitor model, we determined the voltage drop across the insulator-semiconductor interface and the “free” and “trapped” hole densities. Comparable values were obtained when either the gate voltage or the dielectric constant of the insulator was varied. In our model, we assumed that the “free” holes and the “trapped” holes conducted current separately with the “trapped” holes associated with negative charge states in the insulator. Our model predicted that the turn-on voltage increased negatively when the dielectric constant of the insulator was small.
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This work is supported in part by NSERC, Canada.
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Kwok, H.L. The roles of “free” and “trapped” charges in single-crystal rubrene organic field-effect transistors. J Mater Sci: Mater Electron 21, 535–539 (2010). https://doi.org/10.1007/s10854-009-9953-9
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DOI: https://doi.org/10.1007/s10854-009-9953-9