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Optical and electrical properties of Mg x Zn1−x O thin films by sol–gel method

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Abstract

Mg x Zn1−x O (0 ≤ x ≤ 0.35) thin films have been deposited by sol–gel technique and the composition related structural, electrical, and optical properties are investigated. All the films have hexagonal wurtzite structure and the separation of MgO phase occurs when x = 0.3 and 0.35. With the increase of Mg content, the densification of the films decrease and band gap values increase. The maximum band gap value reaches 3.56 eV when x = 0.15. After Mg doping the conductivities of the Mg x Zn1−x O films are reduced greatly and the electrical current–voltage (I–V) characteristics show nonlinearity for x > 0.15.

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Acknowledgment

This work was supported by the “Hundred Talents Program,” the Chinese Academy of Sciences, the Zhejiang Natural Science Foundation (Y407364), and the Ningbo Natural Science Foundation (No. 2007A610027, No. 2008A610047, No. 2009A610018). The authors would give thanks to the all measurers of XRD, SEM and UV–vis absorption spectroscopy of Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences.

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Authors and Affiliations

  1. Ningbo Institute of Material Technology and Engineering, Chinese Acedemy of Sciences, 315201, Ningbo, People’s Republic of China

    Jia Li, Jin-Hua Huang, Wei-Jie Song & Ye Yang

  2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, People’s Republic of China

    Jia Li & Xiao-Min Li

  3. College of Information Science and Engineering, Ningbo University, No. 818 Fenghua Road, Jiangbei District, 315211, Ningbo, People’s Republic of China

    Rui-Qin Tan

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  1. Jia Li
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  2. Jin-Hua Huang
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  3. Wei-Jie Song
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  4. Rui-Qin Tan
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  5. Ye Yang
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Correspondence to Wei-Jie Song.

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Li, J., Huang, JH., Song, WJ. et al. Optical and electrical properties of Mg x Zn1−x O thin films by sol–gel method. J Mater Sci: Mater Electron 21, 529–533 (2010). https://doi.org/10.1007/s10854-009-9952-x

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  • DOI: https://doi.org/10.1007/s10854-009-9952-x

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