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InAs quantum dot superluminescent diodes with trench structure

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Abstract

Using a trench structure, we have realized improved reliability for processing InAs quantum-dot-based J-shaped superluminescent diodes (SLDs) with shallow-etched waveguides. The observed drastic decrease of output power in shallow-etched-waveguide SLDs is recovered with the deep-etched waveguide. The output power increases with decreasing separation between the waveguide and the trench. The maximum output power of the SLDs with the trench structure exceeds 25 mW. The trench structure should help to achieve low production costs while retaining high reliability.

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Acknowledgments

This work was supported by the Ministry of Knowledge Economy through the IT Industry Foundation (2M23780).

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Authors and Affiliations

  1. Nano Device Research Center, Korea Institute of Science and Technology, Seoul, 136-791, Korea

    Young Chae Yoo & Il Ki Han

  2. Hankuk Academy of Foreign Studies, Yongin, 449-791, Korea

    Lee-Hyun Kim

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  1. Young Chae Yoo
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  2. Lee-Hyun Kim
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  3. Il Ki Han
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Correspondence to Il Ki Han.

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Yoo, Y.C., Kim, LH. & Han, I.K. InAs quantum dot superluminescent diodes with trench structure. J Mater Sci: Mater Electron 21, 445–449 (2010). https://doi.org/10.1007/s10854-009-9936-x

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  • DOI: https://doi.org/10.1007/s10854-009-9936-x

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