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Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum

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Abstract

In the present paper, Ti doped ZnO films with higher conductive properties were grown on room temperature glass substrates by radio frequency magnetron sputtering and followed by annealing in vacuum. The microstructures and surface figures of the films were investigated by X-ray diffraction and scanning electronic microscopy, and its optical and electrical properties were measured using a four-point probe technique and 756-type spectrophotometer at room temperature. The results show that the preferred growth orientation of the films is (002) orientation, and after annealing in vacuum at 400 °C for 3 h, the average transmittance reduces from 90 to 80%, and resistivity reduces from 4.53 × 10−2 to 8.78 × 10−4 Ω cm.

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Acknowledgments

The authors are grateful to the Education Department of Guangxi Zhuang Autonomous Region for financially supporting this research under the 200807LX121 grants.

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Authors and Affiliations

  1. Department of Information Materials Science and Engineering, Guilin University of Electronic Technology, 541004, Guilin, China

    Minhong Jiang, Xinyu Liu, Guohua Chen, Jun Cheng & Xiujuan Zhou

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  1. Minhong Jiang
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  2. Xinyu Liu
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Correspondence to Minhong Jiang.

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Jiang, M., Liu, X., Chen, G. et al. Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum. J Mater Sci: Mater Electron 20, 1225–1228 (2009). https://doi.org/10.1007/s10854-009-9856-9

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  • DOI: https://doi.org/10.1007/s10854-009-9856-9

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