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Interfacial characteristic of (Ba,Sr)TiO3 thin films deposited on different bottom electrodes

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Abstract

Barium strontium titanate (Ba1−x Sr x )TiO3 (BST) thin films were deposited on Pt, Ru, RuO2, and Pt/RuO2 electrodes by radio frequency magnetron sputtering. The interfacial structure characteristic of the BST films deposited on various electrodes was investigated. X-ray photoelectron spectroscopy investigations showed that the interfacial diffusion layer in BST/Pt and BST/Ru are approximately 6 and 10 nm, respectively. The BST films are short of Ba and O elements comparing with the stoichiometry Ba0.65Sr0.35TiO3 in the interface region. Dielectric measurement of the BST films with thickness ranging from 70 to 400 nm revealed that the BST films deposited on Pt and Pt/RuO2 bottom electrodes have similar dielectric property, the BST films deposited on Ru have the highest bulk dielectric constant, and the thickness dependence of dielectric constant on the BST film deposited on RuO2 electrode can be neglected. The interfacial layer dielectric constant of BST films deposited on Pt and Ru electrodes are estimated to be about 34.5 and 157.1, respectively. The effect of interfacial dead-layer on the dielectric constant could be eliminated through selecting appropriate bottom electrodes.

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Acknowledgments

This work has been supported by the National Natural Science Foundation of PR China through Grant No. 50672022 and The Hubei Province Key Laboratory of Refractories and Ceramics Ministry-Province jointly-Constructed Cultivation Base for State key Laboratory through Grant No. G0701.

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Authors and Affiliations

  1. Faculty of Materials Science and Engineering, Hubei University, 430062, Wuhan, China

    Jinzhao Wang, Tianjin Zhang, Baishun Zhang, Juan Jiang, Ruikun Pan & Zhijun Ma

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  1. Jinzhao Wang
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  2. Tianjin Zhang
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  3. Baishun Zhang
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  4. Juan Jiang
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Correspondence to Tianjin Zhang.

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Wang, J., Zhang, T., Zhang, B. et al. Interfacial characteristic of (Ba,Sr)TiO3 thin films deposited on different bottom electrodes. J Mater Sci: Mater Electron 20, 1208–1213 (2009). https://doi.org/10.1007/s10854-009-9853-z

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  • DOI: https://doi.org/10.1007/s10854-009-9853-z

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