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Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN

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Abstract

Thermal annealing temperature effects on the electrical and structural properties of platinum/molybdenum (Pt/Mo) Schottky contacts on n-type GaN have been investigated by current–voltage (I–V), capacitance–voltage (C–V), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) techniques. As-deposited Pt/Mo/n-GaN Schottky diode exhibits barrier height of 0.75 eV (I–V) and 0.82 eV (C–V). Upon annealing at 400 and 500 °C, the barrier height slightly increased to 0.77 eV (I–V) and 0.92 eV (C–V) and 0.82 eV (I–V) and 0.97 eV (C–V), respectively. A maximum barrier height of 0.83 eV (I–V) and 0.99 eV (C–V) is obtained on the Pt/Mo contacts annealed at 600 °C. X-ray photoelectron spectroscopy results shows that the Ga 2p core-level shift towards the low-energy side for the contact annealed at 600 °C as compared to the as-deposited one. Based on the results of XPS and XRD studies, the formation of gallide phases at Pt/Mo/n-GaN interface could be the reason for the increase of Schottky barrier heights upon annealing at elevated temperatures. The atomic force microscopy (AFM) results showed that the Pt/Mo contact does not seriously suffer from thermal degradation during annealing even at 600 °C (RMS roughness of 5.41 nm). These results make Pt/Mo Schottky contacts attractive for high temperature device applications.

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Acknowledgments

The authors would like to thank Dr. Jong-Seong Bae, Korea Basic Science Institute (KBSI), Busan, Korea for his support carrying out XPS depth profile measurements. Also, the authors thank the Department of Science and Technology (DST), Government of India, New Delhi for providing financial assistance (Grant No. SR/S2/CMP-51/2003).

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Authors and Affiliations

  1. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India

    Varra Rajagopal Reddy & P. Koteswara Rao

  2. Department of Electronics, P. G. Centre, University of Mysore, Hemagangotri, Hassan, India

    M. Ravinandan

  3. Department of Semiconductor Science & Technology, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju, 561-756, Korea

    Chel-Jong Choi

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  1. Varra Rajagopal Reddy
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  2. M. Ravinandan
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Correspondence to Varra Rajagopal Reddy.

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Reddy, V.R., Ravinandan, M., Koteswara Rao, P. et al. Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN. J Mater Sci: Mater Electron 20, 1018–1025 (2009). https://doi.org/10.1007/s10854-008-9824-9

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