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Preparation and optical properties of Bi doped ZnO thin films with (100) orientation by rf magnetron sputtering

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Abstract

Bi doped ZnO films with (100) orientation have been grown on glass substrates by rf magnetron sputtering followed by vacuum annealing at 400 °C for 3 h. X-ray diffraction (XRD) revealed that the film first growth along (002) direction was suppressed to form (100) plane with c-axis parallel to the substrate. After annealed at 400 °C for 3 h under vacuum, transmittance about 80% in visible region and near 100% absorption in UV region for (100) oriented Bi doped ZnO films are confirmed by the optical transmission spectra. The optical band gap is evaluated to be around 3.13 eV which is lower than (002) oriented films.

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Authors and Affiliations

  1. Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Minhong Jiang & Xinyu Liu

  2. College of Material Science and Engineering, Central South University, Changsha, 410083, People’s Republic of China

    Minhong Jiang & Xinyu Liu

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  1. Minhong Jiang
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  2. Xinyu Liu
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Correspondence to Minhong Jiang.

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Jiang, M., Liu, X. Preparation and optical properties of Bi doped ZnO thin films with (100) orientation by rf magnetron sputtering. J Mater Sci: Mater Electron 20, 972–976 (2009). https://doi.org/10.1007/s10854-008-9820-0

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  • DOI: https://doi.org/10.1007/s10854-008-9820-0

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