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Structural, optoelectronic and electrochemical properties of nickel oxide films

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Abstract

Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the polycrystalline nature of the films. The microstructural parameters were evaluated. The band gap of the films was found to be about 3.60 eV. Electrical resistivity of the films was 4.5 × 10−4 Ω cm. FTIR studies indicated a broad spectrum centered at 461.6 cm−1. Cyclic voltammetry studies in 1 M KOH solution revealed good electronic electrochromic behaviour.

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Authors and Affiliations

  1. Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi, 630006, Tamilnadu, India

    B. Subramanian, K. R. Murali, V. S. Vidhya & M. Jayachandran

  2. Birla Institute of Technology and Science (BITS)-Pilani, Dubai, UAE

    M. Mohammed Ibrahim

  3. School of Physics, Alagappa University, Karaikudi, 630003, Tamilnadu, India

    C. Sanjeeviraja

Authors
  1. B. Subramanian
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  2. M. Mohammed Ibrahim
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  3. K. R. Murali
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  4. V. S. Vidhya
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  5. C. Sanjeeviraja
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  6. M. Jayachandran
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Correspondence to M. Jayachandran.

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Subramanian, B., Mohammed Ibrahim, M., Murali, K.R. et al. Structural, optoelectronic and electrochemical properties of nickel oxide films. J Mater Sci: Mater Electron 20, 953–957 (2009). https://doi.org/10.1007/s10854-008-9819-6

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  • DOI: https://doi.org/10.1007/s10854-008-9819-6

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