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Nanoporous ZnO thin films deposited by electrochemical anodization: effect of UV light

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Abstract

Nanoporous ZnO thin films were deposited by electrochemical anodization of high purity Zn at room temperature using Pt counter electrode, calomel reference electrode and oxalic acid as the electrolyte. The crystallinity and the surface morphology were studied by X-ray diffraction (XRD) and Field emission scanning electron microscope (FESEM). The variation in molar concentration of oxalic acid during anodization had significant effect on the crystal size and the pore size particularly in the presence of UV light. An increase in room temperature band gap from 3.25 to 3.87 eV of ZnO film grown in 0.3 M oxalic acid indicates a quantum confinement effect and it was further confirmed by a blue shift of the photoluminescence (PL) spectra. A possible mechanism of the anodization and the photoetching in the presence of UV light of the ZnO film have been suggested.

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Authors and Affiliations

  1. IC Design & Fabrication Centre, Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata, 700032, India

    P. K. Basu, N. Saha, S. Maji, H. Saha & Sukumar Basu

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  1. P. K. Basu
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  2. N. Saha
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  3. S. Maji
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  4. H. Saha
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  5. Sukumar Basu
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Correspondence to Sukumar Basu.

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Basu, P.K., Saha, N., Maji, S. et al. Nanoporous ZnO thin films deposited by electrochemical anodization: effect of UV light. J Mater Sci: Mater Electron 19, 493–499 (2008). https://doi.org/10.1007/s10854-008-9604-6

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  • DOI: https://doi.org/10.1007/s10854-008-9604-6

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