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Effect of plasma treated sol-gel dielectric towards the morphology of pentacene

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Abstract

This paper discusses the effect of forming gas (93%N2 + 7%H2) plasma treatment for sol-gel methyl-silsesquioxane (MSQ) as a dielectric film towards the grain morphology of a solution processable pentacene. Atomic force microscopy and X-ray diffractometer results confirm that a brief (10 s) plasma treatment for MSQ increases the grain size of pentacene and encourages its growth in thin-film phase. This paper also demonstrates that the presence of large Si(CH3)3 bonds on the MSQ surface are very important to encourage the growth of pentacene’s molecules in thin-film phase. In addition, this paper also suggests that there is no strong relationship between the grain size and ordering of pentacene molecules.

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Acknowledgement

This work was performed with the support of The University of Auckland staff’s research fund no. 3607226/9274 and HEEP fund from AsiaNZ Foundation. The authors would like to thank Dr. Alec Asadov for XRD support; Dr. B. James of Research Centre for Surface and Material Science (RCSMS), University of Auckland for XPS support and lastly Dr. Z.W. Li for plasma treatment support.

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Authors and Affiliations

  1. Mechanical Engineering, The University of Auckland, Auckland, New Zealand

    K. C. Aw

  2. Chemical and Materials Engineering, The University of Auckland, Auckland, New Zealand

    N. Tjitra Salim & W. Gao

  3. School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore

    Anup Lohani

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  1. K. C. Aw
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  2. N. Tjitra Salim
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  3. Anup Lohani
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  4. W. Gao
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Correspondence to K. C. Aw.

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Aw, K.C., Tjitra Salim, N., Lohani, A. et al. Effect of plasma treated sol-gel dielectric towards the morphology of pentacene. J Mater Sci: Mater Electron 19, 1247–1251 (2008). https://doi.org/10.1007/s10854-008-9580-x

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  • DOI: https://doi.org/10.1007/s10854-008-9580-x

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