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Effect of manganese and cobalt doping on conductivity of ZnO based varistors: a study by complex plane modulus

Journal of Materials Science: Materials in Electronics volume 19, pages 1122–1127 (2008)Cite this article

Abstract

Effect of manganese and cobalt doping (0.50 mole%) on electrical properties of ZnO based varistors has been studied using complex plane modulus analysis. It is found that total resistivity of Mn doped sample is more as compared to that of Co doped sample. This has been ascribed to existence of Mn in variable valence states viz. Mn2+, Mn3+ and Mn4+ which promotes hopping conduction leading to increase in the conductivity as compared to Co doped sample, in which Co exists predominantly in +3 state with traces of Co2+ or Co+4 states. This accounts for its less conductivity. Mechanism of conduction is the same for grains and grainboundaries.

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Acknowledgement

The authors are thankful to Prof D. Pandey, Mr. S. P. Singh and Mr. A. K. Singh of School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, India for providing XRD facility. One of the authors, Sindhu Singh is thankful to CSIR-New Delhi for providing financial support.

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  1. Archana Pandey

    Present address: Michigan Technological University, 1400 Townsend Drive, Houghton, MI, USA

Authors and Affiliations

  1. Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221005, UP, India

    Archana Pandey, Abhishek Prasad, Sindhu Singh, Om Parkash & Devendra Kumar

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  1. Archana Pandey
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  2. Abhishek Prasad
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  3. Sindhu Singh
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  4. Om Parkash
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Correspondence to Om Parkash.

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Pandey, A., Prasad, A., Singh, S. et al. Effect of manganese and cobalt doping on conductivity of ZnO based varistors: a study by complex plane modulus. J Mater Sci: Mater Electron 19, 1122–1127 (2008). https://doi.org/10.1007/s10854-007-9484-1

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  • DOI: https://doi.org/10.1007/s10854-007-9484-1

Keywords

  • Bi2O3
  • Sb2O3
  • Complex Plane Impedance
  • Modulus Plot
  • Cobalt Doping

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