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Photo-induced transformations in amorphous chalcogenide nano-multilayers

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Abstract

Photo-stimulated interdiffusion in a-Se/As2S3 amorphous chalcogenide nano-multilayers (ANML) is known as a useful method for amplitude-phase optical relief formation besides the known amorphous–amorphous or amorphous–crystalline photo-induced structural transformations (PST) in homogeneous chalcogenide layers, but it has a relatively narrow sensitivity spectral range and small amplitude modulation. Experimental evidences of improvement of optical recording processes were obtained in Te-, Bi-, Sb-containing nano-layered structures based on As2S3 matrix. The influence of nano-structuring and combination of components on the sensitivity, type of the recorded relief is discussed.

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Acknowledgements

This work was supported by OTKA Grants T046758, K67685 and D048594, as well as by Hungarian–Indian Bilateral R&D cooperation Grants. Authors are grateful to Dr. M. Shiplyak for the help in sample preparation.

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Authors and Affiliations

  1. Institute of Physics, University of Debrecen, Debrecen, Hungary

    Sandor Kokenyesi, Dezso L. Beke, Viktor Takats, Attila Csik & Lajos Daroczi

  2. Department of Physics, Indian Institute of Science, Bangalore, India

    Kanatinkal S. Sangunni

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  1. Sandor Kokenyesi
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  2. Dezso L. Beke
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  3. Kanatinkal S. Sangunni
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  4. Viktor Takats
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  5. Attila Csik
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  6. Lajos Daroczi
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Correspondence to Sandor Kokenyesi.

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Kokenyesi, S., Beke, D.L., Sangunni, K.S. et al. Photo-induced transformations in amorphous chalcogenide nano-multilayers. J Mater Sci: Mater Electron 20 (Suppl 1), 107–110 (2009). https://doi.org/10.1007/s10854-007-9460-9

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  • DOI: https://doi.org/10.1007/s10854-007-9460-9

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