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Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures

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Abstract

In a recent publication [Phys. Rev. Lett. 97, 227402 (2006)], it has been demonstrated numerically that a long-range disorder potential in a semiconductor quantum well can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters, such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.

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Acknowledgments

The authors are grateful to H. Stolz, K. Maschke, and T. Meier for valuable discussions. P. B. and H. S. gratefully acknowledge the financial support by the European Commission, Marie Curie Excellence Grant MEXT-CT-2005-023778 (Nanoelectrophotonics). In Marburg, this work has been supported by the Optodynamics Center of the Philipps-University Marburg and by the Deutsche Forschungsgemeinschaft through the Quantum Optics in Semiconductors Research Group. I.V. thanks for financial support from OTKA (Hungarian Research Fund) under Contracts No. T042981 and No. T046303.

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Correspondence to Peter Bozsoki.

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Bozsoki, P., Hoyer, W., Kira, M. et al. Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. J Mater Sci: Mater Electron 20 (Suppl 1), 23–29 (2009). https://doi.org/10.1007/s10854-007-9424-0

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  • DOI: https://doi.org/10.1007/s10854-007-9424-0

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