Abstract
In a recent publication [Phys. Rev. Lett. 97, 227402 (2006)], it has been demonstrated numerically that a long-range disorder potential in a semiconductor quantum well can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters, such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.
Similar content being viewed by others
References
H. Overhof, P. Thomas, Electronic Transport in Hydrogenated Amorphous Semiconductors, Springer Tracts in Mod. Phys., vol. 114 (Springer, Berlin, 1989)
B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors (Springer, 1984)
R.J. Elliott, I.P. Ipatova (eds.), Optical Properties of Mixed Crystals (Elsevier, 1988)
T. Meier, P. Thomas, S.W. Koch, Coherent Semiconductor Optics: From Basic Concepts to Nanostructure Applications (Springer-Verlag, 2007)
Y. Yayon, et al., Phys. Rev. Lett. 89, 157402 (2002)
C. Ell, et al., Phys. Rev. Lett. 80, 4795 (1998)
A.V. Shchegrov, et al., Phys. Rev. Lett. 84, 3478 (2000)
S.T. Bramwell, Nature 439, 19 (2006)
I.V. Gornyi, et al., Phys. Rev. Lett. 95, 206603 (2005)
W. Langbein, et al., Phys. Rev. Lett. 89, 157401 (2002)
P. Bozsoki, et al., Phys. Rev. Lett. 97, 227402 (2006)
U. Neubert, et al., Appl. Phys. Lett. 80, 3340 (2002)
G. von Freymann, et al., Phys. Rev. B 65, 205327 (2002)
A. Richter, et al., Phys. Rev. Lett. 79, 2145 (1997)
R. Cingolani, et al., J. Appl. Phys. 86, 6793 (1999)
M. Kira, et al., Prog. Quant. Electron. 23, 6 (1999)
P. Bozsoki, et al., J. Lumin. 124, 99 (2007)
W. Hoyer, et al., Phys. Rev. Lett. 93, 067401 (2004)
Acknowledgments
The authors are grateful to H. Stolz, K. Maschke, and T. Meier for valuable discussions. P. B. and H. S. gratefully acknowledge the financial support by the European Commission, Marie Curie Excellence Grant MEXT-CT-2005-023778 (Nanoelectrophotonics). In Marburg, this work has been supported by the Optodynamics Center of the Philipps-University Marburg and by the Deutsche Forschungsgemeinschaft through the Quantum Optics in Semiconductors Research Group. I.V. thanks for financial support from OTKA (Hungarian Research Fund) under Contracts No. T042981 and No. T046303.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Bozsoki, P., Hoyer, W., Kira, M. et al. Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. J Mater Sci: Mater Electron 20 (Suppl 1), 23–29 (2009). https://doi.org/10.1007/s10854-007-9424-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-007-9424-0