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Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element


Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 μm square, are fabricated using pseudomorphic Al0.3Ga0.7As/GaAs/In y Ga1-y As (0.2 ≤ y ≤ 0.3) heterostructures with Si-doped channels. The structures were optimized for thermal stability using a calculation of the self-consistent solution of Schrödinger-Poisson equations and Fermi-Dirac statistics in Hartree approximation. The optimized structure based on a Si-δ-doped 144 Å In0.2Ga0.8As quantum well embedded into uniformly doped GaAs channel showed thermal drifts of only 90 ppm·K−1 in current drive mode and 192 ppm K−1 in voltage drive mode. The measurements of the absolute magnetic sensitivity and the low frequency noise were done. The micro-Hall sensor, optimized for thermal drift, is able to resolve the magnetic field of 438 nT.

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The authors are indebted to B. Herrmann for Hall measurements and A. Ridel for technical assistance in device processing. This work was supported by the DFG Grant No. MA 1749/4-1(2) and by the National Science Foundation under Grant No. DMR-0520550.

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Correspondence to Vasyl P. Kunets.

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J. Dobbert is a visiting scholar from the Department of Physics, Humboldt-Universität zu Berlin.

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Kunets, V.P., Dobbert, J., Mazur, Y.I. et al. Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element. J Mater Sci: Mater Electron 19, 776–782 (2008).

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  • GaAs
  • Quantum Well
  • Thermal Drift
  • Absolute Sensitivity
  • InGaAs Layer