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InP based semiconductor structures for radiation detection

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Abstract

We report the preparation of semi-insulating InP single crystals of p-type conductivity and intentionally undoped p-type epitaxial layers for radiation detection. We focus on (i) the growth of InP single crystals doped with copper by the Czochralski technique and their subsequent temperature annealing to convert them to a semi-insulating (SI) state of p-type conductivity, and (ii) the growth of thick (>10 μm) p-type InP layers by liquid phase epitaxy with an admixture of Pr and Dy. Grown layers and single crystals were examined by low-temperature photoluminescence spectroscopy, capacitance-voltage and temperature dependent Hall measurements. An efficient purification due to rare earth (RE) admixture has been observed and layers grown with the addition of Pr and Dy exhibit the change of electrical conductivity from n to p at certain RE concentration in the melt. Dominant acceptors responsible for conductivity conversion have been identified. Three types of detection structures exploiting the Schottky or Schottky like contacts on pure and SI p-type InP or exploiting the p–n junction were designed.

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Acknowledgement

The work has been supported by the Grant Agency of the Czech Republic, project No. 102/06/0153.

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Authors and Affiliations

  1. Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberská 57, Praha 8, 18251, Czech Republic

    Olga Procházková, Jan Grym, Ladislav Pekárek, Jiří Zavadil & Karel Žďánský

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  1. Olga Procházková
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  2. Jan Grym
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  3. Ladislav Pekárek
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  4. Jiří Zavadil
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  5. Karel Žďánský
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Correspondence to Olga Procházková.

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Procházková, O., Grym, J., Pekárek, L. et al. InP based semiconductor structures for radiation detection. J Mater Sci: Mater Electron 19, 770–775 (2008). https://doi.org/10.1007/s10854-007-9407-1

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  • DOI: https://doi.org/10.1007/s10854-007-9407-1

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