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Effects of working pressure on the electrical and optical properties of aluminum-doped zinc oxide thin films

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Abstract

Zinc oxide films have been actively investigated as transparent electrode materials for optical displays. We report the effect of the working pressure on the electrical and optical properties of Al-doped ZnO thin films deposited by D.C. magnetron sputtering. The films were deposited in working pressures ranging from 1 mTorr to 10 mTorr. The effect of the working pressure was determined and the mechanism of the electrical and optical properties was explained. To understand the relationship between the electrical and optical properties of the films and film structure, the film density, resistivity, carrier concentration, carrier mobility, mean free path and optical band-gap in the films were measured as a function of the working pressure.

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Acknowledgements

This work was supported by Samsung Electronics Co. through the Brain Korea 21 project under the ministry of Education and Human Resources Development.

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea

    Yeon-Keon Moon, Borae Bang, Se-Hyun Kim & Jong-Wan Park

  2. LCD R&D Center, Samsung Electronics Co., Ltd., Yongin-City, Gyonggi-Do, Korea

    Chang-Oh Jeong

Authors
  1. Yeon-Keon Moon
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  2. Borae Bang
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  3. Se-Hyun Kim
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  4. Chang-Oh Jeong
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  5. Jong-Wan Park
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Correspondence to Jong-Wan Park.

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Moon, YK., Bang, B., Kim, SH. et al. Effects of working pressure on the electrical and optical properties of aluminum-doped zinc oxide thin films. J Mater Sci: Mater Electron 19, 528–532 (2008). https://doi.org/10.1007/s10854-007-9375-5

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  • DOI: https://doi.org/10.1007/s10854-007-9375-5

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