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Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals

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Abstract

Undoped and impurity-doped single crystals of Si x Ge1−x with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin’s curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1.

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Acknowledgement

This work was partially supported by JSPS Grants-in Aid (No. 1345001and No. 16039202).

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  1. Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan

    I. Yonenaga

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  1. I. Yonenaga
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Correspondence to I. Yonenaga.

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Yonenaga, I. Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals. J Mater Sci: Mater Electron 19, 315–318 (2008). https://doi.org/10.1007/s10854-007-9338-x

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  • DOI: https://doi.org/10.1007/s10854-007-9338-x

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