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Dependence of Cu/In ratio of structural and electrical characterization of CuInS2 crystal

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Abstract

CuInS2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn5S8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.

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Acknowledgements

The authors would like to thank Dr. H. Miyake of Mie University for his useful discussions. This work was in part supported by The Iwatani Naoji Foundation’s Research Grant.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki, 889-2192, Japan

    K. Yoshino, K. Nomoto, A. Kinoshita & T. Ikari

  2. Department of Electrical Engineering, Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki, 885-8567, Japan

    Y. Akaki

  3. Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka, 816-8580, Japan

    T. Yoshitake

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  1. K. Yoshino
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  2. K. Nomoto
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  3. A. Kinoshita
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Correspondence to K. Yoshino.

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Yoshino, K., Nomoto, K., Kinoshita, A. et al. Dependence of Cu/In ratio of structural and electrical characterization of CuInS2 crystal. J Mater Sci: Mater Electron 19, 301–304 (2008). https://doi.org/10.1007/s10854-007-9334-1

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